| Part Number | BFP640ESDH6327XTSA1 | BFP840ESDH6327XTSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V | 2.25V |
| Frequency - Transition | 46GHz | 80GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 2dB @ 150MHz ~ 10GHz | 0.85dB @ 5.5GHz |
| Gain | 7dB ~ 30dB | 18.5dB |
| Power - Max | 200mW | 75mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V | 150 @ 10mA, 1.8V |
| Current - Collector (Ic) (Max) | 50mA | 35mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SC-82A, SOT-343 | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4-2 | PG-SOT343-4-2 |