| Part Number | BFP740E6327 | BFP640E6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V | 4.5V |
| Frequency - Transition | 42GHz | 40GHz |
| Noise Figure (dB Typ @ f) | 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
| Gain | 27dB | 24dB |
| Power - Max | 160mW | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 25mA, 3V | 110 @ 30mA, 3V |
| Current - Collector (Ic) (Max) | 30mA | 50mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SC-82A, SOT-343 | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4 | PG-SOT343-4 |