Part Number | BFP840FESDH6327XTSA1 | BFP540FESDH6327XTSA1 |
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Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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Product Status | Active | Active |
Transistor Type | NPN | NPN |
Voltage - Collector Emitter Breakdown (Max) | 2.6V | 5V |
Frequency - Transition | 85GHz | 30GHz |
Noise Figure (dB Typ @ f) | 0.75dB @ 5.5GHz | 0.9dB ~ 1.4dB @ 1.8GHz |
Gain | 35dB | 20dB |
Power - Max | 75mW | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 1.8V | 50 @ 20mA, 3.5V |
Current - Collector (Ic) (Max) | 35mA | 80mA |
Operating Temperature | 150°C (TJ) | 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 4-SMD, Flat Leads | 4-SMD, Flat Leads |
Supplier Device Package | PG-TSFP-4-1 | 4-TSFP |