BFP540FESDH6327XTSA1 vs BFP640FESDH6327XTSA1

Product Attributes

Part Number BFP540FESDH6327XTSA1 BFP640FESDH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP540FESDH6327XTSA1 BFP640FESDH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 5V 4.7V
Frequency - Transition 30GHz 46GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain 20dB 8B ~ 30.5dB
Power - Max 250mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 3.5V 110 @ 30mA, 3V
Current - Collector (Ic) (Max) 80mA 50mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 4-SMD, Flat Leads 4-SMD, Flat Leads
Supplier Device Package 4-TSFP 4-TSFP