BFP420H6327XTSA1 vs BFP410H6327XTSA1

Product Attributes

Part Number BFP420H6327XTSA1 BFP410H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP420H6327XTSA1 BFP410H6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 5V 5V
Frequency - Transition 25GHz 25GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz 1.2dB @ 2GHz
Gain 21dB 21.5dB
Power - Max 160mW 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA, 4V 60 @ 13mA, 2V
Current - Collector (Ic) (Max) 35mA 40mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-3D PG-SOT343-4-2