BFP193WH6327XTSA1 vs BFP196WH6327XTSA1

Product Attributes

Part Number BFP193WH6327XTSA1 BFP196WH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP193WH6327XTSA1 BFP196WH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 8GHz 7.5GHz
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain 13.5dB ~ 20.5dB 12.5dB ~ 19dB
Power - Max 580mW 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA, 8V 70 @ 50mA, 8V
Current - Collector (Ic) (Max) 80mA 150mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-3D PG-SOT343-4-1