| Part Number | BFP193E6327HTSA1 | BFP193WE6327HTSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
|
|
|
| Product Status | Active | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V | 12V |
| Frequency - Transition | 8GHz | 8GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Gain | 12dB ~ 18dB | 13.5dB ~ 20.5dB |
| Power - Max | 580mW | 580mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V | 70 @ 30mA, 8V |
| Current - Collector (Ic) (Max) | 80mA | 80mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-253-4, TO-253AA | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT-143-3D | PG-SOT343-3D |