BFP183WH6327 vs BFP183WE6327

Product Attributes

Part Number BFP183WH6327 BFP183WE6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP183WH6327 BFP183WE6327
Product Status Active Active
Transistor Type - NPN
Voltage - Collector Emitter Breakdown (Max) - 12V
Frequency - Transition - 8GHz
Noise Figure (dB Typ @ f) - 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain - 22dB
Power - Max - 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce - 70 @ 15mA, 8V
Current - Collector (Ic) (Max) - 65mA
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - SC-82A, SOT-343
Supplier Device Package - PG-SOT343-4