BFP182WE6327 vs BFP183WE6327

Product Attributes

Part Number BFP182WE6327 BFP183WE6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP182WE6327 BFP183WE6327
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 8GHz 8GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain 22dB 22dB
Power - Max 250mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 8V 70 @ 15mA, 8V
Current - Collector (Ic) (Max) 35mA 65mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-4 PG-SOT343-4