| Part Number | BFP 640FESD E6327 | BFP 740FESD E6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V | 4.7V |
| Frequency - Transition | 46GHz | 47GHz |
| Noise Figure (dB Typ @ f) | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz | 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz |
| Gain | 8B ~ 30.5dB | 9dB ~ 31dB |
| Power - Max | 200mW | 160mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V | 160 @ 25mA, 3V |
| Current - Collector (Ic) (Max) | 50mA | 45mA |
| Operating Temperature | - | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 4-SMD, Flat Leads | 4-SMD, Flat Leads |
| Supplier Device Package | 4-TSFP | 4-TSFP |