BFP 520F E6327 vs BFP 540F E6327

Product Attributes

Part Number BFP 520F E6327 BFP 540F E6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP 520F E6327 BFP 540F E6327
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 3.5V 5V
Frequency - Transition 45GHz 30GHz
Noise Figure (dB Typ @ f) 0.95dB @ 1.8GHz 0.9dB ~ 1.4dB @ 1.8GHz
Gain 22.5dB 20dB
Power - Max 100mW 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA, 2V 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max) 40mA 80mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 4-SMD, Flat Leads 4-SMD, Flat Leads
Supplier Device Package 4-TSFP 4-TSFP