| Part Number | BFN39E6327 | BFN38E6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | - |
| Current - Collector (Ic) (Max) | 200 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 10V | - |
| Power - Max | 1.5 W | - |
| Frequency - Transition | 100MHz | - |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Package / Case | TO-261-4, TO-261AA | - |
| Supplier Device Package | SOT-223 | - |