| Part Number | BFG541,115 | BFG591,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V | 15V |
| Frequency - Transition | 9GHz | 7GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.4dB @ 900MHz | - |
| Gain | - | - |
| Power - Max | 650mW | 2W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 40mA, 8V | 60 @ 70mA, 8V |
| Current - Collector (Ic) (Max) | 120mA | 200mA |
| Operating Temperature | 175°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Supplier Device Package | SC-73 | SC-73 |