BFG520W,115 vs BFG540W,115

Product Attributes

Part Number BFG520W,115 BFG540W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFG520W,115 BFG540W,115
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 9GHz 9GHz
Noise Figure (dB Typ @ f) 1.1dB ~ 2.1dB @ 900MHz 1.3dB ~ 1.8dB @ 900MHz
Gain - -
Power - Max 500mW 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA, 6V 100 @ 40mA, 8V
Current - Collector (Ic) (Max) 70mA 120mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-343 Reverse Pinning SOT-343 Reverse Pinning
Supplier Device Package 4-SO 4-SO