BFG424W,115 vs BFG424F,115

Product Attributes

Part Number BFG424W,115 BFG424F,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFG424W,115 BFG424F,115
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.5V 4.5V
Frequency - Transition 25GHz 25GHz
Noise Figure (dB Typ @ f) 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain 22dB 23dB
Power - Max 135mW 135mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA, 2V 50 @ 25mA, 2V
Current - Collector (Ic) (Max) 30mA 30mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SOT-343 Reverse Pinning
Supplier Device Package CMPAK-4 4-SO