BFG410W,135 vs BFG480W,135

Product Attributes

Part Number BFG410W,135 BFG480W,135
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFG410W,135 BFG480W,135
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.5V 4.5V
Frequency - Transition 22GHz 21GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain 21dB 16dB
Power - Max 54mW 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 2V 40 @ 80mA, 2V
Current - Collector (Ic) (Max) 12mA 250mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4