| Part Number | BFG410W,135 | BFG410W,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V | 4.5V |
| Frequency - Transition | 22GHz | 22GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz | 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz |
| Gain | 21dB | 21dB |
| Power - Max | 54mW | 54mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 2V | 50 @ 10mA, 2V |
| Current - Collector (Ic) (Max) | 12mA | 12mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SC-82A, SOT-343 | SC-82A, SOT-343 |
| Supplier Device Package | CMPAK-4 | CMPAK-4 |