| Part Number | BFG 196 E6327 | BFG 19S E6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V | 15V |
| Frequency - Transition | 7.5GHz | 5.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz | 2dB ~ 3dB @ 900MHz ~ 1.8GHz |
| Gain | 9dB ~ 14.5dB | 14dB ~ 8.5dB |
| Power - Max | 800mW | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V | 70 @ 70mA, 8V |
| Current - Collector (Ic) (Max) | 150mA | 210mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4 | PG-SOT223-4 |