BDV65BG vs BDV65B

Product Attributes

Part Number BDV65BG BDV65B
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BDV65BG BDV65B
Product Status Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A 2V @ 20mA, 5A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V 1000 @ 5A, 4V
Power - Max 125 W 125 W
Frequency - Transition - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-218-3
Supplier Device Package TO-247-3 SOT-93