| Part Number | BDV64 | BDV64B |
|---|---|---|
| Manufacturer | NTE Electronics, Inc | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Obsolete |
| Transistor Type | PNP | PNP - Darlington |
| Current - Collector (Ic) (Max) | 12 A | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 100 V |
| Vce Saturation (Max) @ Ib, Ic | - | 2V @ 20mA, 5A |
| Current - Collector Cutoff (Max) | - | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V | 1000 @ 5A, 4V |
| Power - Max | 125 W | 125 W |
| Frequency - Transition | 60MHz | - |
| Operating Temperature | - | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-218-3 | TO-218-3 |
| Supplier Device Package | TO-218 | SOT-93 |