| Part Number | BDP948H6327XTSA1 | BDP949H6327XTSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Not For New Designs | Not For New Designs |
| Transistor Type | PNP | NPN |
| Current - Collector (Ic) (Max) | 3 A | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V | 100 @ 500mA, 1V |
| Power - Max | 5 W | 5 W |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-10 | PG-SOT223-4-10 |