BDC01DRL1 vs BDC01DRL1G

Product Attributes

Part Number BDC01DRL1 BDC01DRL1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BDC01DRL1 BDC01DRL1G
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 1A 700mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA, 1V 40 @ 100mA, 1V
Power - Max 1 W 1 W
Frequency - Transition 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226)