BD810 vs BD810G

Product Attributes

Part Number BD810 BD810G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BD810 BD810G
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max) 1mA (ICBO) 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V 15 @ 4A, 2V
Power - Max 90 W 90 W
Frequency - Transition 1.5MHz 1.5MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220