BD535 vs BD435

Product Attributes

Part Number BD535 BD435
Manufacturer Harris Corporation onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BD535 BD435
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 8 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 32 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100µA 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2A, 2V 85 @ 500mA, 1V
Power - Max 50 W 36 W
Frequency - Transition - 3MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-225AA, TO-126-3
Supplier Device Package TO-220AB TO-126