BCX53H6327XTSA1 vs BCX55H6327XTSA1

Product Attributes

Part Number BCX53H6327XTSA1 BCX55H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCX53H6327XTSA1 BCX55H6327XTSA1
Product Status Not For New Designs Not For New Designs
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W
Frequency - Transition 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89