BCX42E6327HTSA1 vs BCX52E6327HTSA1

Product Attributes

Part Number BCX42E6327HTSA1 BCX52E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCX42E6327HTSA1 BCX52E6327HTSA1
Product Status Not For New Designs Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 800 mA 1 A
Voltage - Collector Emitter Breakdown (Max) 125 V 60 V
Vce Saturation (Max) @ Ib, Ic 900mV @ 30mA, 300mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 10µA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V 40 @ 150mA, 2V
Power - Max 330 mW 2 W
Frequency - Transition 150MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-243AA
Supplier Device Package PG-SOT23 PG-SOT89