BCW68GLT1G vs BCW68GLT3G

Product Attributes

Part Number BCW68GLT1G BCW68GLT3G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCW68GLT1G BCW68GLT3G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 30mA, 300mA 1.5V @ 30mA, 300mA
Current - Collector Cutoff (Max) 20nA 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 1V 120 @ 10mA, 1V
Power - Max 225 mW 225 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)