BCW67BE6327HTSA1 vs BCW67CE6327HTSA1

Product Attributes

Part Number BCW67BE6327HTSA1 BCW67CE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCW67BE6327HTSA1 BCW67CE6327HTSA1
Product Status Not For New Designs Not For New Designs
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23