| Part Number | BCW67AE6327 | BCW61AE6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | - | PNP |
| Current - Collector (Ic) (Max) | - | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | - | 32 V |
| Vce Saturation (Max) @ Ib, Ic | - | 550mV @ 1.25mA, 50mA |
| Current - Collector Cutoff (Max) | - | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 120 @ 2mA, 5V |
| Power - Max | - | 330 mW |
| Frequency - Transition | - | 250MHz |
| Operating Temperature | - | 150°C (TJ) |
| Mounting Type | - | Surface Mount |
| Package / Case | - | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | - | PG-SOT23 |