BCW65CLT1G vs BCW65ALT1G

Product Attributes

Part Number BCW65CLT1G BCW65ALT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCW65CLT1G BCW65ALT1G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 225 mW 225 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)