BCW60DE6327 vs BCW60FE6327

Product Attributes

Part Number BCW60DE6327 BCW60FE6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCW60DE6327 BCW60FE6327
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 32 V -
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA -
Current - Collector Cutoff (Max) 20nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA, 5V -
Power - Max 330 mW -
Frequency - Transition 250MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package PG-SOT23 -