| Part Number | BCW 66G E6327 | BCW 66H E6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 800 mA | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA | 450mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V | 250 @ 100mA, 1V |
| Power - Max | 330 mW | 330 mW |
| Frequency - Transition | 170MHz | 170MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23 | PG-SOT23 |