BCV62CE6327HTSA1 vs BCV62AE6327HTSA1

Product Attributes

Part Number BCV62CE6327HTSA1 BCV62AE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
BCV62CE6327HTSA1 BCV62AE6327HTSA1
Product Status Not For New Designs Not For New Designs
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 30V 30V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 300mW 300mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA
Supplier Device Package PG-SOT-143-3D PG-SOT-143-3D