BCV28E6327HTSA1 vs BCV29E6327HTSA1

Product Attributes

Part Number BCV28E6327HTSA1 BCV29E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCV28E6327HTSA1 BCV29E6327HTSA1
Product Status Active Obsolete
Transistor Type - NPN - Darlington
Current - Collector (Ic) (Max) - 500 mA
Voltage - Collector Emitter Breakdown (Max) - 30 V
Vce Saturation (Max) @ Ib, Ic - 1V @ 100µA, 100mA
Current - Collector Cutoff (Max) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 20000 @ 100mA, 5V
Power - Max - 1 W
Frequency - Transition - 150MHz
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-243AA
Supplier Device Package - PG-SOT89