| Part Number | BCR196E6327 | BCR196WE6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Active | Active |
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 70 mA | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Resistor - Base (R1) | 47 kOhms | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V | 50 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| Frequency - Transition | 150 MHz | 150 MHz |
| Power - Max | 200 mW | 250 mW |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 |
| Supplier Device Package | PG-SOT23-3-11 | PG-SOT323-3 |