BCR166WH6327XTSA1 vs BCR169WH6327XTSA1

Product Attributes

Part Number BCR166WH6327XTSA1 BCR169WH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR166WH6327XTSA1 BCR169WH6327XTSA1
Product Status Not For New Designs Not For New Designs
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 160 MHz 200 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323