| Part Number | BCR166E6327 | BCR166WE6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
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| Product Status | Active | Active |
| Transistor Type | PNP - Pre-Biased | - |
| Current - Collector (Ic) (Max) | 100 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | - |
| Resistor - Base (R1) | 4.7 kOhms | - |
| Resistor - Emitter Base (R2) | 47 kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | - |
| Frequency - Transition | 160 MHz | - |
| Power - Max | 200 mW | - |
| Mounting Type | Surface Mount | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | - |
| Supplier Device Package | PG-SOT23-3-11 | - |