| Part Number | BCR133WH6327 | BCR133WE6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
|
|
|
| Product Status | Active | Active |
| Transistor Type | NPN - Pre-Biased | - |
| Current - Collector (Ic) (Max) | 100 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | - |
| Resistor - Base (R1) | 10 kOhms | - |
| Resistor - Emitter Base (R2) | 10 kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | - |
| Frequency - Transition | 130 MHz | - |
| Power - Max | 250 mW | - |
| Mounting Type | Surface Mount | - |
| Package / Case | SC-70, SOT-323 | - |
| Supplier Device Package | PG-SOT323-3 | - |