| Part Number | BCR133WE6327 | BCR133TE6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | Transistors - Bipolar (BJT) - Single, Pre-Biased |
|
|
|
| Product Status | Active | Active |
| Transistor Type | - | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | - | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | - | 50 V |
| Resistor - Base (R1) | - | 10 kOhms |
| Resistor - Emitter Base (R2) | - | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | - | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - | 100nA (ICBO) |
| Frequency - Transition | - | 130 MHz |
| Power - Max | - | 200 mW |
| Mounting Type | - | Surface Mount |
| Package / Case | - | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | - | PG-SOT23-3-11 |