BCR183E6327HTSA1 vs BCR133E6327HTSA1

Product Attributes

Part Number BCR183E6327HTSA1 BCR133E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR183E6327HTSA1 BCR133E6327HTSA1
Product Status Not For New Designs Not For New Designs
Transistor Type PNP - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 200 MHz 130 MHz
Power - Max 200 mW 200 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23