BCR119SH6327XTSA1 vs BCR129SH6327XTSA1

Product Attributes

Part Number BCR119SH6327XTSA1 BCR129SH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
BCR119SH6327XTSA1 BCR129SH6327XTSA1
Product Status Not For New Designs Not For New Designs
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 4.7kOhms 10kOhms
Resistor - Emitter Base (R2) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) - -
Frequency - Transition 150MHz 150MHz
Power - Max 250mW 250mW
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO PG-SOT363-PO