BCR112WE6327BTSA1 vs BCR116WE6327BTSA1

Product Attributes

Part Number BCR112WE6327BTSA1 BCR116WE6327BTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR112WE6327BTSA1 BCR116WE6327BTSA1
Product Status Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA, 5V 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 140 MHz 150 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323