| Part Number | BCR08PNH6327XTSA1 | BCR08PNH6727XTSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
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| Product Status | Not For New Designs | Not For New Designs |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V | 50V |
| Resistor - Base (R1) | 2.2kOhms | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V | 70 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - | - |
| Frequency - Transition | 170MHz | 170MHz |
| Power - Max | 250mW | 250mW |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | 6-VSSOP, SC-88, SOT-363 |
| Supplier Device Package | PG-SOT363-PO | PG-SOT363-PO |