| Part Number | BCP5416E6327HTSA1 | BCP5616E6327HTSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Obsolete |
| Transistor Type | - | NPN |
| Current - Collector (Ic) (Max) | - | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | - | 80 V |
| Vce Saturation (Max) @ Ib, Ic | - | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 100 @ 150mA, 2V |
| Power - Max | - | 2 W |
| Frequency - Transition | - | 100MHz |
| Operating Temperature | - | 150°C (TJ) |
| Mounting Type | - | Surface Mount |
| Package / Case | - | TO-261-4, TO-261AA |
| Supplier Device Package | - | PG-SOT223-4-10 |