BCP5310TA vs BCP5510TA

Product Attributes

Part Number BCP5310TA BCP5510TA
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BCP5310TA BCP5510TA
Product Status Active Active
Transistor Type PNP -
Current - Collector (Ic) (Max) 1 A -
Voltage - Collector Emitter Breakdown (Max) 80 V -
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V -
Power - Max 2 W -
Frequency - Transition 150MHz -
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-261-4, TO-261AA -
Supplier Device Package SOT-223-3 -