| Part Number | BCP55E6327 | BCP54E6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 1 A | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V | 40 @ 150mA, 2V |
| Power - Max | 2 W | 2 W |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-21 | SOT-223 |