BC857W,115 vs BC858W,115

Product Attributes

Part Number BC857W,115 BC858W,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC857W,115 BC858W,115
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323