| Part Number | BC857BQCZ | BC857CQCZ |
|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 100 mA | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 850mV @ 5mA, 100mA | 850mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V | 420 @ 2mA, 5V |
| Power - Max | 360 mW | 360 mW |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank |
| Package / Case | 3-XDFN Exposed Pad | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1412D-3 | DFN1412D-3 |