BC856BWT1G vs BC856BWT1

Product Attributes

Part Number BC856BWT1G BC856BWT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC856BWT1G BC856BWT1
Product Status Active Obsolete
Transistor Type PNP -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 65 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 150 mW -
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case SC-70, SOT-323 -
Supplier Device Package SC-70-3 (SOT323) -