BC856BDW1T1 vs BC857BDW1T1

Product Attributes

Part Number BC856BDW1T1 BC857BDW1T1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
BC856BDW1T1 BC857BDW1T1
Product Status Obsolete Obsolete
Transistor Type 2 PNP (Dual) -
Current - Collector (Ic) (Max) 100mA -
Voltage - Collector Emitter Breakdown (Max) 65V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 380mW -
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case 6-TSSOP, SC-88, SOT-363 -
Supplier Device Package SC-88/SC70-6/SOT-363 -